MECHANISMS OF REACTIVE ION-BEAM SPUTTERING OF SILICON-NITRIDE IN PRESENCE OF N-15-LABELED OR D-LABELED AMMONIA

被引：13

作者：

BOSSEBOEUF, A ^{[1
]}

BOUCHIER, D ^{[1
]}

RIGO, S ^{[1
]}

机构：

[1] UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75251 PARIS,FRANCE

来源：

关键词：

D O I：

10.1149/1.2108682

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：810 / 816

页数：7

共 20 条

[1] MICROANALYSIS OF NITROGEN BY MEANS OF DIRECT OBSERVATION OF NUCLEAR REACTIONS . APPLICATIONS
AMSEL, G
DAVID, D
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1969, 4 (03): : 383 - &
[2] ANDERSEN HH, 1974, MAT PHYS MEDD, V39
[3] BOSSEBOEUF A, UNPUB SURF SCI
[4] Bottiger J., 1971, Radiation Effects, V11, P69, DOI 10.1080/00337577108230451
[5] LOW-TEMPERATURE DEPOSITION OF SILICON-NITRIDE BY REACTIVE ION-BEAM SPUTTERING
BOUCHIER, D
GAUTHERIN, G
SCHWEBEL, C
BOSSEBOEUF, A
AGIUS, B
RIGO, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : 638 - 644
[6] BURDOVITSIN VA, 1983, THIN SOLID FILMS, V105, P197, DOI 10.1016/0040-6090(83)90285-7
[7] A 1ST ORDER DIFFUSION-APPROXIMATION TO ATOMIC REDISTRIBUTION DURING ION-BOMBARDMENT OF SOLIDS, .2. FINITE-RANGE APPROXIMATION
CARTER, G
COLLINS, R
THOMPSON, DA
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1981, 55 (1-2): : 99 - 110
[8] CHOW R, 1982, J APPL PHYS, V53, P5360
[9] PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS
CHU, WK
MAYER, JW
NICOLET, MA
BUCK, TM
AMSEL, G
EISEN, F
[J]. THIN SOLID FILMS, 1973, 17 (01) : 1 - 41
[10] ANALYSIS AND DEPTH PROFILING OF DEUTERIUM WITH THE DCHE-3,P)HE-4 REACTION BY DETECTING THE PROTONS AT BACKWARD ANGLES
DIEUMEGARD, D
DUBREUIL, D
AMSEL, G
[J]. NUCLEAR INSTRUMENTS & METHODS, 1979, 166 (03): : 431 - 445