LOW-TEMPERATURE DEPOSITION OF SILICON-NITRIDE BY REACTIVE ION-BEAM SPUTTERING

被引:19
作者
BOUCHIER, D [1 ]
GAUTHERIN, G [1 ]
SCHWEBEL, C [1 ]
BOSSEBOEUF, A [1 ]
AGIUS, B [1 ]
RIGO, S [1 ]
机构
[1] UNIV PARIS 07,ENS,PHYS SOLIDES GRP,F-75221 PARIS,FRANCE
关键词
D O I
10.1149/1.2119772
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:638 / 644
页数:7
相关论文
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