LOW-THRESHOLD INGAAS/GAAS STRAINED-LAYER RIDGE WAVE-GUIDE SURFACE EMITTING LASERS WITH 2 45-DEGREES ANGLE ETCHED INTERNAL TOTAL REFLECTION MIRRORS

被引：9

作者：

CHAO, CP

LAW, KK

MERZ, JL

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 13期

关键词：

D O I：

10.1063/1.106273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new type of in-plane surface emitting laser structure with two 45-degrees mirrors has been demonstrated. The device is a ridge waveguide laser with total reflection mirrors etched at 45-degrees to the plane of the active layer, having an epitaxially grown distributed Bragg reflector. Continous-wave threshold current as low as 10 mA with 12% external differential quantum efficiency is achieved on a 5-mu-m-wide, 400-mu-m-long device.

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页码：1532 / 1534

页数：3

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