MOS SMALL-SIGNAL CONDUCTANCES IN THE WEAK AVALANCHE MULTIPLICATION REGION

被引：2

作者：

CSERVENY, S

机构：

[1] Swiss Center for Electronics and Microtechnology, Circuit and System Design

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 05期

关键词：

D O I：

10.1109/16.129110

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental results on MOS small-signal conductances in the weak avalanche multiplication region are presented. The increase in the channel current due to the bulk effect produced by the voltage drop in the substrate has been considered and included into a simple model for the output conductance. Changes in the other small-signal conductances, such as the transconductance overshoot, have also been investigated.

引用

页码：1233 / 1235

页数：3

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