SUBSTRATE CURRENT MODEL FOR SUBMICROMETER MOSFETS BASED ON MEAN FREE-PATH ANALYSIS

被引：13

作者：

HWANG, CG ^{[1
]}

DUTTON, RW ^{[1
]}

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 07期

关键词：

D O I：

10.1109/16.30940

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1348 / 1354

页数：7

共 28 条

[1] A SIMPLE METHOD TO CHARACTERIZE SUBSTRATE CURRENT IN MOSFETS [J].

CHAN, TY ;

KO, PK ;

HU, C .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) :505-507

[2] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON [J].

CHYNOWETH, AG .

PHYSICAL REVIEW, 1958, 109 (05) :1537-1540

[3] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J].

CROWELL, CR ;

SZE, SM .

APPLIED PHYSICS LETTERS, 1966, 9 (06) :242-&

[4] MOSFET SUBSTRATE CURRENT MODEL INCLUDING ENERGY-TRANSPORT [J].

FUKUMA, M ;

LUI, WW .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :214-216

[5] SUBSTRATE CURRENT AT CRYOGENIC TEMPERATURES - MEASUREMENTS AND A TWO-DIMENSIONAL MODEL FOR CMOS TECHNOLOGY [J].

HENNING, AK ;

CHAN, NN ;

WATT, JT ;

PLUMMER, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) :64-74

[6] COUPLED MONTE CARLO-DRIFT DIFFUSION ANALYSIS OF HOT-ELECTRON EFFECTS IN MOSFETS [J].

HIGMAN, JM ;

HESS, K ;

HWANG, CG ;

DUTTON, RW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (05) :930-937

[7]

HO CP, 1983, SUPREM III PROGRAM I

[8]

HORIUCHI T, 1987, IEDM, P506

[9] STRUCTURE-ENHANCED MOSFET DEGRADATION DUE TO HOT-ELECTRON INJECTION [J].

HSU, FC ;

GRINOLDS, HR .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) :71-74

[10] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J].

HU, CM ;

TAM, SC ;

HSU, FC ;

KO, PK ;

CHAN, TY ;

TERRILL, KW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :375-385

← 1 2 3 →