LOW-TEMPERATURE GROWTH OF HIGH-RESISTIVITY GAP BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：5

作者：

RAMDANI, J

HE, Y

LEONARD, M

ELMASRY, N

BEDAIR, SM

机构：

[1] Department of Electrical and Computer Engineering, North Carolina State University, Raleigh

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 14期

关键词：

D O I：

10.1063/1.108439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaP films were epitaxially grown on GaP substrates at a low temperature approximately 200-degrees-C using gas source molecular beam epitaxy (MBE). The lattice constant of these LT GaP films was found to be larger than that of both the GaP substrate and films grown at high temperatures. These results can be explained by excess phosphorus present in these LT films. The resistivity of these films is comparable to that of the semi-insulating (SI) GaP substrate. These results are considered the first demonstration of high resistivity, semi-insulating LT GaP films.

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页码：1646 / 1648

页数：3

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