LITHIUM-DOPED GALLIUM ARSENIDE TUNNEL DIODES

被引：7

作者：

EPSTEIN, AS

CALDWELL, JF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1964年 / 35卷 / 10期

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D O I：

10.1063/1.1713161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3050 / &

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