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AN EXPERIMENTAL-METHOD FOR THE DETERMINATION OF THE SATURATION POINT OF A MOSFET
被引:10
作者
:
BOOTH, RVH
论文数:
0
引用数:
0
h-index:
0
BOOTH, RVH
WHITE, MH
论文数:
0
引用数:
0
h-index:
0
WHITE, MH
机构
:
来源
:
IEEE JOURNAL OF SOLID-STATE CIRCUITS
|
1984年
/ 19卷
/ 01期
关键词
:
D O I
:
10.1109/JSSC.1984.1052094
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:113 / 117
页数:5
相关论文
共 6 条
[1]
CONDUCTANCE OF MOS TRANSISTORS IN SATURATION
[J].
FROHMANB.D
论文数:
0
引用数:
0
h-index:
0
机构:
Research and Development Laboratory, Fairchild Semiconductor, Palo Alto, Calif.
FROHMANB.D
;
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
机构:
Research and Development Laboratory, Fairchild Semiconductor, Palo Alto, Calif.
GROVE, AS
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1969,
ED16
(01)
:108
-+
[2]
MODEL AND PERFORMANCE OF HOT-ELECTRON MOS-TRANSISTORS FOR VLSI
[J].
HOEFFLINGER, B
论文数:
0
引用数:
0
h-index:
0
机构:
University of Dortmund, Dortmund
HOEFFLINGER, B
;
SIBBERT, H
论文数:
0
引用数:
0
h-index:
0
机构:
University of Dortmund, Dortmund
SIBBERT, H
;
ZIMMER, G
论文数:
0
引用数:
0
h-index:
0
机构:
University of Dortmund, Dortmund
ZIMMER, G
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
:513
-520
[3]
ACCURATE LARGE-SIGNAL MOS TRANSISTOR MODEL FOR USE IN COMPUTER-AIDED DESIGN
[J].
MERCKEL, G
论文数:
0
引用数:
0
h-index:
0
MERCKEL, G
;
BOREL, J
论文数:
0
引用数:
0
h-index:
0
BOREL, J
;
CUPCEA, NZ
论文数:
0
引用数:
0
h-index:
0
CUPCEA, NZ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(05)
:681
-+
[4]
SOURCE TO DRAIN RESISTANCE BEYOND PINCH-OFF IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS (MOST)
[J].
REDDI, VGK
论文数:
0
引用数:
0
h-index:
0
REDDI, VGK
;
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1965,
ED12
(03)
:139
-+
[5]
VLADAMIRESCU A, 1980, UCBERL M807 U CAL EL
[6]
HIGH-ACCURACY MOS MODELS FOR COMPUTER-AIDED-DESIGN
[J].
WHITE, MH
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
WHITE, MH
;
VANDEWIELE, F
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
VANDEWIELE, F
;
LAMBOT, JP
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
LAMBOT, JP
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(05)
:899
-906
←
1
→
共 6 条
[1]
CONDUCTANCE OF MOS TRANSISTORS IN SATURATION
[J].
FROHMANB.D
论文数:
0
引用数:
0
h-index:
0
机构:
Research and Development Laboratory, Fairchild Semiconductor, Palo Alto, Calif.
FROHMANB.D
;
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
机构:
Research and Development Laboratory, Fairchild Semiconductor, Palo Alto, Calif.
GROVE, AS
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1969,
ED16
(01)
:108
-+
[2]
MODEL AND PERFORMANCE OF HOT-ELECTRON MOS-TRANSISTORS FOR VLSI
[J].
HOEFFLINGER, B
论文数:
0
引用数:
0
h-index:
0
机构:
University of Dortmund, Dortmund
HOEFFLINGER, B
;
SIBBERT, H
论文数:
0
引用数:
0
h-index:
0
机构:
University of Dortmund, Dortmund
SIBBERT, H
;
ZIMMER, G
论文数:
0
引用数:
0
h-index:
0
机构:
University of Dortmund, Dortmund
ZIMMER, G
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
:513
-520
[3]
ACCURATE LARGE-SIGNAL MOS TRANSISTOR MODEL FOR USE IN COMPUTER-AIDED DESIGN
[J].
MERCKEL, G
论文数:
0
引用数:
0
h-index:
0
MERCKEL, G
;
BOREL, J
论文数:
0
引用数:
0
h-index:
0
BOREL, J
;
CUPCEA, NZ
论文数:
0
引用数:
0
h-index:
0
CUPCEA, NZ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(05)
:681
-+
[4]
SOURCE TO DRAIN RESISTANCE BEYOND PINCH-OFF IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS (MOST)
[J].
REDDI, VGK
论文数:
0
引用数:
0
h-index:
0
REDDI, VGK
;
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1965,
ED12
(03)
:139
-+
[5]
VLADAMIRESCU A, 1980, UCBERL M807 U CAL EL
[6]
HIGH-ACCURACY MOS MODELS FOR COMPUTER-AIDED-DESIGN
[J].
WHITE, MH
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
WHITE, MH
;
VANDEWIELE, F
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
VANDEWIELE, F
;
LAMBOT, JP
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
CATHOLIC UNIV LOUVAIN,DEPT MICROELECTR,B-1348 LOUVAIN LA NEUVE,BELGIUM
LAMBOT, JP
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(05)
:899
-906
←
1
→