CHARGE COLLECTION IN A SCHOTTKY DIODE AS A MIXED BOUNDARY-VALUE PROBLEM

被引：48

作者：

DONOLATO, C

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 11期

关键词：

D O I：

10.1016/0038-1101(85)90195-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1143 / 1151

页数：9

共 18 条

[1]

BELL RO, 1981, ANN REV MATER SCI, V11, P353

[2] A DIFFUSION PROBLEM IN SEMICONDUCTOR TECHNOLOGY [J].

BOERSMA, J ;

INDENKLEEF, JJE ;

KUIKEN, HK .

JOURNAL OF ENGINEERING MATHEMATICS, 1984, 18 (04) :315-333

[3] EVALUATION OF DIFFUSION LENGTHS AND SURFACE RECOMBINATION VELOCITIES FROM ELECTRON-BEAM INDUCED CURRENT SCANS [J].

DONOLATO, C .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :120-122

[4] A RECIPROCITY THEOREM FOR CHARGE COLLECTION [J].

DONOLATO, C .

APPLIED PHYSICS LETTERS, 1985, 46 (03) :270-272

[5] A METHOD OF ANALYZING THE INDUCED CURRENT PROFILES OBTAINED ON A SCHOTTKY DIODE AT NORMAL IRRADIATION [J].

DONOLATO, C .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) :121-123

[6]

Gradshteyn I. S., 2014, TABLE INTEGRALS SERI

[7] DIFFUSION LENGTH EVALUATION OF BORON-IMPLANTED SILICON USING THE SEM-EBIC-SCHOTTKY DIODE TECHNIQUE [J].

IOANNOU, DE ;

DAVIDSON, SM .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (08) :1339-1344

[8] A SEM-EBIC MINORITY-CARRIER DIFFUSION-LENGTH MEASUREMENT TECHNIQUE [J].

IOANNOU, DE ;

DIMITRIADIS, CA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (03) :445-450

[9]

Jackson J. D., 1975, CLASSICAL ELECTRODYN

[10] EVALUATION OF DIFFUSION LENGTH AND SURFACE-RECOMBINATION VELOCITY FROM A PLANAR-COLLECTOR-GEOMETRY ELECTRON-BEAM-INDUCED CURRENT SCAN [J].

KUIKEN, HK ;

VANOPDORP, C .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :2077-2090

← 1 2 →