QUANTUM INDUCTANCE WITHIN LINEAR RESPONSE THEORY

被引：80

作者：

FU, YT

DUDLEY, SC

机构：

[1] Department of Physics, Box 1105, Washington University, Saint Louis

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.70.65

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We derive the Landauer-Buttiker formula for admittance from the linear response theory. The result is applied to a system which displays a resonance, and it is shown that the admittance has an inductive component proportional to the lifetime of the resonance.

引用

页码：65 / 68

页数：4

共 21 条

[1] EFFECT OF QUASIBOUND-STATE LIFETIME ON THE OSCILLATION POWER OF RESONANT TUNNELING DIODES
BROWN, ER
PARKER, CD
SOLLNER, TCLG
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (10) : 934 - 936
[2] 4-TERMINAL PHASE-COHERENT CONDUCTANCE
BUTTIKER, M
[J]. PHYSICAL REVIEW LETTERS, 1986, 57 (14) : 1761 - 1764
[3] BUTTIKER M, 1990, ELECT PROPERTIES MUL, P297
[4] SCATTERING DELAY AND RENORMALIZATION OF THE WAVE-DIFFUSION CONSTANT
CWILLICH, G
FU, YT
[J]. PHYSICAL REVIEW B, 1992, 46 (18): : 12015 - 12018
[5] RELATION BETWEEN CONDUCTIVITY AND TRANSMISSION MATRIX
FISHER, DS
LEE, PA
[J]. PHYSICAL REVIEW B, 1981, 23 (12): : 6851 - 6854
[6] WIGNER-FUNCTION MODEL OF A RESONANT-TUNNELING SEMICONDUCTOR-DEVICE
FRENSLEY, WR
[J]. PHYSICAL REVIEW B, 1987, 36 (03): : 1570 - 1580
[7] A SMALL-SIGNAL EQUIVALENT-CIRCUIT MODEL FOR GAAS-ALXGA1-XAS RESONANT TUNNELING HETEROSTRUCTURES AT MICROWAVE-FREQUENCIES
GERING, JM
CRIM, DA
MORGAN, DG
COLEMAN, PD
KOPP, W
MORKOC, H
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) : 271 - 276
[8] TUNNELING TIMES - A CRITICAL-REVIEW
HAUGE, EH
STOVNENG, JA
[J]. REVIEWS OF MODERN PHYSICS, 1989, 61 (04) : 917 - 936
[9] TRANSIENT SWITCHING BEHAVIOR OF THE RESONANT-TUNNELING DIODE
KLUKSDAHL, NC
KRIMAN, AM
FERRY, DK
RINGHOFER, C
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) : 457 - 459
[10] Landau L. D., 1977, QUANTUM MECH, P559

← 1 2 3 →