DEEP LEVELS IN AGGASE2

被引：7

作者：

CHOI, IH

YU, PY

机构：

[1] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA

[2] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1995年 / 56卷 / 3-4期

关键词：

SEMICONDUCTORS; HIGH PRESSURE; DEFECTS; LUMINESCENCE;

D O I：

10.1016/0022-3697(94)00248-7

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The photoluminescence spectra of AgGaSe2 obtained at 77 K are reported. Two emission peaks have been observed and their pressure dependence studied. One of these peaks has been identified with emission involving one of the two deep-level peaks, D-1 and D-2 observed previously in absorption measurement [Appl. Phys. Lett. 64, 1717 (1994)]. A simple model for the capture of carriers into these deep levels has been proposed.

引用

页码：595 / 598

页数：4

共 7 条

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[4] PRESSURE-DEPENDENCE OF DEEP-LEVEL TRANSITIONS IN AGGASE2
CHOI, IH
YU, PY
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[5] PRESSURE-DEPENDENCE OF RAMAN-SCATTERING IN AGGASE2
CHOI, IH
YU, PY
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[6] PRESSURE-DEPENDENCE OF ENERGY-GAP IN SOME I-III-VI2 COMPOUND SEMICONDUCTORS
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[7] ULTRAHIGH PRESSURES
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