THE MECHANISM OF SWIRL DEFECTS FORMATION IN SILICON

被引：537

作者：

VORONKOV, VV

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 59卷 / 03期

关键词：

D O I：

10.1016/0022-0248(82)90386-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：625 / 643

页数：19

共 37 条

[1] SILICON FOR ELECTRONIC DEVICES [J].

BRADSHAW, SE ;

GOORISSEN, J .

JOURNAL OF CRYSTAL GROWTH, 1980, 48 (04) :514-529

[2]

CARSLAW HS, 1959, CONDUCTION HEAT SOLI

[3]

CHIKAWA J, 1980, SOLID STATE TECHNOL, V23, P65

[4] CORRELATION FACTORS FOR DIFFUSION IN SOLIDS [J].

COMPAAN, K ;

HAVEN, Y .

TRANSACTIONS OF THE FARADAY SOCIETY, 1956, 52 (06) :786-801

[5] CORRELATION FACTORS FOR DIFFUSION IN SOLIDS .2. INDIRECT INTERSTITIAL MECHANISM [J].

COMPAAN, K ;

HAVEN, Y .

TRANSACTIONS OF THE FARADAY SOCIETY, 1958, 54 (10) :1498-1508

[6]

De Groot S. R., 2013, NONEQUILIBRIUM THERM

[7] THE EFFECT OF DOPING ON THE FORMATION OF SWIRL DEFECTS IN DISLOCATION-FREE CZOCHRALSKI-GROWN SILICON-CRYSTALS [J].

DEKOCK, AJR ;

VANDEWIJGERT, WM .

JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) :718-734

[8] EFFECT OF GROWTH PARAMETERS ON FORMATION AND ELIMINATION OF VACANCY CLUSTERS IN DISLOCATION-FREE SILICON-CRYSTALS [J].

DEKOCK, AJR ;

ROKSNOER, PJ ;

BOONEN, PGT .

JOURNAL OF CRYSTAL GROWTH, 1974, 22 (04) :311-320

[9] INTRODUCTION OF DISLOCATIONS DURING GROWTH OF FLOATING-ZONE SILICON-CRYSTALS AS A RESULT OF POINT-DEFECT CONDENSATION [J].

DEKOCK, AJR ;

ROKSNOER, PJ ;

BOONEN, PGT .

JOURNAL OF CRYSTAL GROWTH, 1975, 30 (03) :279-294

[10]

DEKOCK AJR, 1973, PHILIPS RES REP S, V1, P1

← 1 2 3 4 →