SUBSTITUTIONAL DOPING OF PHOTOCHEMICALLY-DEPOSITED AMORPHOUS HYDROGENATED SILICON

被引：7

作者：

MISHIMA, Y ^{[1
]}

HIROSE, M ^{[1
]}

OSAKA, Y ^{[1
]}

ASHIDA, Y ^{[1
]}

机构：

[1] MITSUITOATSU CHEM, DEPT CORP DEV, TOKYO 100, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 10期

关键词：

D O I：

10.1063/1.333813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

13

引用

收藏

页码：2803 / 2805

页数：3

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共 13 条

[1] IMPURITY DOPING IN CHEMICALLY VAPOR-DEPOSITED AMORPHOUS HYDROGENATED SILICON FROM DISILANE
ASHIDA, Y
MISHIMA, Y
HIROSE, M
OSAKA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) : 1425 - 1428
[2] SILANE PURIFICATION VIA LASER-INDUCED CHEMISTRY
CLARK, JH
ANDERSON, RG
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 46 - 49
[3] FEHER F, 1977, 2632 FORSH LAND NORD, P11
[4] PREPARATION OF AMORPHOUS-SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION FROM HIGHER SILANES SINH2N+2(NGREATER-THAN1)
GAU, SC
WEINBERGER, BR
AKHTAR, M
KISS, Z
MACDIARMID, AG
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 436 - 438
[5] LASER PURIFICATION OF SILANE - IMPURITY REDUCTION TO THE SUB-PART-PER-MILLION LEVEL
HARTFORD, A
HUBER, EJ
LYMAN, JL
CLARK, JH
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4471 - 4474
[6] SILICON THIN-FILM FORMATION BY DIRECT PHOTOCHEMICAL DECOMPOSITION OF DISILANE
MISHIMA, Y
HIROSE, M
OSAKA, Y
NAGAMINE, K
ASHIDA, Y
KITAGAWA, N
ISOGAYA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (01): : L46 - L48
[7] PROPERTIES OF A-SI-H PREPARED BY THE PHOTOCHEMICAL DECOMPOSITION OF SI2H6
MISHIMA, Y
ASHIDA, Y
HIROSE, M
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 707 - 710
[8] MISHIMA Y, 1982, 7TH P INT C VAC MET, P461
[9] THE 147-NM PHOTOLYSIS OF DISILANE
PERKINS, GGA
LAMPE, FW
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) : 3764 - 3769
[10] SAITOH T, 1982, JPN J APPL PHYS S22, V22, P1