SUBSTITUTIONAL DOPING OF PHOTOCHEMICALLY-DEPOSITED AMORPHOUS HYDROGENATED SILICON

被引:7
作者
MISHIMA, Y [1 ]
HIROSE, M [1 ]
OSAKA, Y [1 ]
ASHIDA, Y [1 ]
机构
[1] MITSUITOATSU CHEM, DEPT CORP DEV, TOKYO 100, JAPAN
关键词
D O I
10.1063/1.333813
中图分类号
O59 [应用物理学];
学科分类号
摘要
13
引用
收藏
页码:2803 / 2805
页数:3
相关论文
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  • [1] IMPURITY DOPING IN CHEMICALLY VAPOR-DEPOSITED AMORPHOUS HYDROGENATED SILICON FROM DISILANE
    ASHIDA, Y
    MISHIMA, Y
    HIROSE, M
    OSAKA, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) : 1425 - 1428
  • [2] SILANE PURIFICATION VIA LASER-INDUCED CHEMISTRY
    CLARK, JH
    ANDERSON, RG
    [J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 46 - 49
  • [3] FEHER F, 1977, 2632 FORSH LAND NORD, P11
  • [4] PREPARATION OF AMORPHOUS-SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION FROM HIGHER SILANES SINH2N+2(NGREATER-THAN1)
    GAU, SC
    WEINBERGER, BR
    AKHTAR, M
    KISS, Z
    MACDIARMID, AG
    [J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 436 - 438
  • [5] LASER PURIFICATION OF SILANE - IMPURITY REDUCTION TO THE SUB-PART-PER-MILLION LEVEL
    HARTFORD, A
    HUBER, EJ
    LYMAN, JL
    CLARK, JH
    [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4471 - 4474
  • [6] SILICON THIN-FILM FORMATION BY DIRECT PHOTOCHEMICAL DECOMPOSITION OF DISILANE
    MISHIMA, Y
    HIROSE, M
    OSAKA, Y
    NAGAMINE, K
    ASHIDA, Y
    KITAGAWA, N
    ISOGAYA, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (01): : L46 - L48
  • [7] PROPERTIES OF A-SI-H PREPARED BY THE PHOTOCHEMICAL DECOMPOSITION OF SI2H6
    MISHIMA, Y
    ASHIDA, Y
    HIROSE, M
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 707 - 710
  • [8] MISHIMA Y, 1982, 7TH P INT C VAC MET, P461
  • [9] THE 147-NM PHOTOLYSIS OF DISILANE
    PERKINS, GGA
    LAMPE, FW
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) : 3764 - 3769
  • [10] SAITOH T, 1982, JPN J APPL PHYS S22, V22, P1