LOW-DEFECT-DENSITY AND HIGH-RELIABILITY FETMOS EEPROMS FABRICATED USING FURNACE N2O OXYNITRIDATION

被引：13

作者：

KIM, YS

OKADA, Y

CHANG, KM

TOBIN, PJ

MORTON, B

CHOE, H

BOWERS, M

KUO, C

CHRUDIMSKY, D

AJURIA, SA

YEARGAIN, JR

机构：

[1] MOTOROLA INC,ADV PROD RES & DEV LAB,AUSTIN,TX 78721

[2] MOTOROLA INC,DIV ADV MICROCONTROLLER,AUSTIN,TX 78735

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 07期

关键词：

D O I：

10.1109/55.225567

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The superior characteristics of floating-gate electron tunneling MOS (FETMOS) EEPROM's fabricated using a furnace N2O oxynitridation process are described in this paper. These devices exhibited about 8 times better endurance and good data retention characteristics while maintaining defect density comparable to that of the control thermal oxide devices. These devices also showed very good thickness uniformity across the wafer and wafer-to-water.

引用

页码：342 / 344

页数：3

共 13 条

[1] A 2-STEP OXIDATION PROCESS TO IMPROVE THE ELECTRICAL BREAKDOWN PROPERTIES OF THIN OXIDES [J].

BHATTACHARYYA, A ;

VORST, C ;

CARIM, AH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) :1900-1903

[2]

Chen L., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P620

[3] NOVEL N2O-OXYNITRIDATION TECHNOLOGY FOR FORMING HIGHLY RELIABLE EEPROM TUNNEL OXIDE-FILMS [J].

FUKUDA, H ;

YASUDA, M ;

IWABUCHI, T ;

OHNO, S .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (11) :587-589

[4] COMPOSITIONAL STUDY OF ULTRATHIN RAPIDLY REOXIDIZED NITRIDED OXIDES [J].

HORI, T ;

IWASAKI, H ;

OHMURA, T ;

SAMIZO, A ;

SATO, M ;

YOSHIOKA, Y .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (02) :629-635

[5]

Hwang H., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P421, DOI 10.1109/IEDM.1990.237142

[6]

JOHNSON WS, 1980, ISSCC, P152

[7]

KUO C, 1993, UNPUB S VLSI TECH SY

[8]

OKADA Y, IN PRESS APPL PHYS L

[9]

Sharma U., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P461, DOI 10.1109/IEDM.1992.307401

[10] COMPOSITION AND GROWTH-KINETICS OF ULTRATHIN SIO2-FILMS FORMED BY OXIDIZING SI SUBSTRATES IN N2O [J].

TING, W ;

HWANG, H ;

LEE, J ;

KWONG, DL .

APPLIED PHYSICS LETTERS, 1990, 57 (26) :2808-2810

← 1 2 →