IMPROVED TRANSMISSION SECONDARY-EMISSION FROM IN-XGA-1-XP/GAAS SELF-SUPPORTING FILMS ACTIVATED TO NEGATIVE ELECTRON-AFFINITY

被引：10

作者：

MARTINELLI, RU ^{[1
]}

OLSEN, GH ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 04期

关键词：

D O I：

10.1063/1.322836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1332 / 1336

页数：5

共 9 条

[1]

ABRAHAMS MS, UNPUBLISHED

[2]

BELL RL, 1973, NEGATIVE ELECTRON AF

[3] EFFECT OF LATTICE-PARAMETER MISMATH IN NEA GAAS PHOTOCATHODES GROWN ON GAP-INXGA1-XP SUBSTRATES [J].

ENSTROM, RE ;

FISHER, DG .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :1976-1982

[4] SECONDARY-ELECTRON EMISSION FROM GAAS [J].

GUTIERREZ, WA ;

HOLT, SL ;

POMMERRENIG, HD .

APPLIED PHYSICS LETTERS, 1972, 21 (06) :249-+

[5] REFLECTION AND TRANSMISSION SECONDARY EMISSION FROM SILICON [J].

MARTINEL.RU .

APPLIED PHYSICS LETTERS, 1970, 17 (08) :313-&

[6] ELECTRON-BEAM PENETRATION IN GAAS [J].

MARTINELLI, RU ;

WANG, CC .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3350-3351

[7] APPLICATION OF SEMICONDUCTORS WITH NEGATIVE ELECTRON AFFINITY SURFACES TO ELECTRON-EMISSION DEVICES [J].

MARTINELLI, RU ;

FISHER, DG .

PROCEEDINGS OF THE IEEE, 1974, 62 (10) :1339-1360

[8] REFLECTION AND TRANSMISSION SECONDARY-EMISSION FROM GAAS [J].

MARTINELLI, RU ;

GOSSENBERGER, HF ;

SCHULTZ, ML .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (11) :4803-+

[9] ASYMMETRIC CRACKING IN III-V COMPOUNDS [J].

OLSEN, GH ;

ABRAHAMS, MS ;

ZAMEROWSKI, TJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) :1650-1656

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