REFLECTION AND TRANSMISSION SECONDARY-EMISSION FROM GAAS

被引：16

作者：

MARTINELLI, RU

GOSSENBERGER, HF

SCHULTZ, ML

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 11期

关键词：

D O I：

10.1063/1.1661015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4803 / +

页数：1

共 18 条

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[3]

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[5] LONG-WAVELENGTH PHOTOEMISSION FROM GA1-XINXAS ALLOYS [J].

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ENSTROM, RE ;

WILLIAMS, BF .

APPLIED PHYSICS LETTERS, 1971, 18 (09) :371-&

[6] DEPENDENCE ON CRYSTALLINE FACE OF BAND BENDING IN CS2 O-ACTIVATED GAAS [J].

JAMES, LW ;

ANTYPAS, GA ;

EDGECUMBE, J ;

MOON, RL ;

BELL, RL .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :4976-+

[7] COLD-CATHODE ELECTRON EMISSION FROM SILICON [J].

KOHN, ES .

APPLIED PHYSICS LETTERS, 1971, 18 (07) :272-&

[8] REFLECTION AND TRANSMISSION SECONDARY EMISSION FROM SILICON [J].

MARTINEL.RU .

APPLIED PHYSICS LETTERS, 1970, 17 (08) :313-&

[9] INFRARED PHOTOEMISSION FROM SILICON [J].

MARTINELLI, RU .

APPLIED PHYSICS LETTERS, 1970, 16 (07) :261-+

[10] SECONDARY EMISSION STUDIES ON GE AND NA-COVERED GE [J].

PALMBERG, PW .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (05) :2137-&

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