REFLECTION AND TRANSMISSION SECONDARY-EMISSION FROM GAAS

被引：16

作者：

MARTINELLI, RU

GOSSENBERGER, HF

SCHULTZ, ML

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 11期

关键词：

D O I：

10.1063/1.1661015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4803 / +

页数：1

共 18 条

[11] NOVEL GAAS-(ALGA)AS COLD-CATHODE STRUCTURE AND FACTORS AFFECTING EXTENDED OPERATION [J].

SCHADE, H ;

KRESSEL, H ;

NELSON, H .

APPLIED PHYSICS LETTERS, 1972, 20 (10) :385-&

[12] GaAs-Cs: A NEW TYPE OF PHOTOEMITTER [J].

Scheer, J. J. ;

van Laar, J. .

SOLID STATE COMMUNICATIONS, 1965, 3 (08) :189-193

[13] GAAS1-XPX AS A NEW HIGH QUANTUM YIELD PHOTOEMISSIVE MATERIAL FOR VISIBLE SPECTRUM [J].

SIMON, RE ;

SOMMER, AH ;

TIETJEN, JJ ;

WILLIAMS, BF .

APPLIED PHYSICS LETTERS, 1969, 15 (02) :43-+

[14] SECONDARY-ELECTRON EMISSION [J].

SIMON, RE ;

WILLIAMS, BF .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (03) :167-+

[15] PHOTOEMISSION FROM GAAS-CS-O [J].

TURNBULL, AA ;

EVANS, GB .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (02) :155-&

[16] IMPROVED PHOTOEMITTERS USING GAAS AND INGAAS [J].

UEBBING, JJ ;

BELL, RL .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09) :1624-&

[17] CURRENT STATUS OF NEGATIVE ELECTRON AFFINITY DEVICES [J].

WILLIAMS, BF ;

TIETJEN, JJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (10) :1489-+

[18] INGAAS-CSO A LOW WORK FUNCTION (LESS THAN 1.OEV) PHOTOEMITTER [J].

WILLIAMS, BF .

APPLIED PHYSICS LETTERS, 1969, 14 (09) :273-+

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