IMPROVED SCHOTTKY-BARRIER ON N-SB2S3 FILMS CHEMICALLY DEPOSITED WITH SILICOTUNGSTIC ACID

被引：23

作者：

SAVADOGO, O

MANDAL, KC

机构：

[1] Département de métallurgie et de génie des Matériaux, Ecole Polytechnique de Montréal, Montréal, Québec H3C 3A7, Case Postale 6079, Suce. “A”

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 18期

关键词：

SOLAR CELLS; DIODES; SEMICONDUCTOR DEVICES;

D O I：

10.1049/el:19921069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first fabrication of low cost Schottky barrier solar cells on chemically deposited polycrystalline n-Sb2S3 thin films is reported. It is observed that in the films deposited with silicotungstic acid and annealed, the Schottky barrier height (phi(b)) of the Au/n-Sb2S3 junctions is considerably improved from 0.54 to 0.76 eV. The ideality factor n decreased from 2.32 to 1.08 and the reverse-saturation current density J0 from 3.2 x 10(-6) to 1.5 x 10(-9) A cm-2. Under AM1 illumination, the improved diode exhibited a conversion efficiency of approximately 3%.

引用

页码：1682 / 1683

页数：2

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