INP SCHOTTKY CONTACTS WITH INCREASED BARRIER HEIGHT

被引:62
作者
WADA, O
MAJERFELD, A
ROBSON, PN
机构
[1] UNIV COLORADO,DEPT ELECT ENGN,BOULDER,CO 80309
[2] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
关键词
D O I
10.1016/0038-1101(82)90123-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:381 / 387
页数:7
相关论文
共 37 条
[1]   GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS [J].
ADAMS, AC ;
PRUNIAUX, BR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) :408-414
[2]   NOTE ON EVALUATION OF SCHOTTKY DIODE PARAMETERS IN PRESENCE OF AN INTERFACIAL LAYER [J].
ASHOK, S ;
BORREGO, JM ;
GUTMANN, RJ .
ELECTRONICS LETTERS, 1978, 14 (11) :332-333
[3]   INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].
BARRERA, JS ;
ARCHER, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :1023-1030
[4]   STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].
CARD, HC ;
RHODERICK, EH .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+
[5]   OPTICAL STUDIES OF BAND STRUCTURE OF INP [J].
CARDONA, M .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) :958-&
[6]   MEASUREMENT OF CARRIER-CONCENTRATION PROFILES IN EPITAXIAL INDIUM PHOSPHIDE [J].
CARDWELL, MJ ;
PEART, RF .
ELECTRONICS LETTERS, 1973, 9 (04) :88-89
[7]   CYCLOTRON RESONANCE WITH EPITAXIAL FILMS OF TYPE INP [J].
CHAMBERL.JM ;
SIMMONDS, PE ;
STRADLIN.RA ;
BRADLEY, CC .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (02) :L38-&
[8]   GAAS SCHOTTKY DIODES WITH NEAR-IDEAL CHARACTERISTICS [J].
COLEMAN, DJ ;
IRVIN, JC ;
SZE, SM .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (07) :1121-+
[10]   SURFACE VACANCIES IN INP AND GAAIAS [J].
DAW, MS ;
SMITH, DL .
APPLIED PHYSICS LETTERS, 1980, 36 (08) :690-692