CHARACTERISTICS OF MOS SOLAR-CELLS BUILT ON (NORMAL-TYPE) INP SUBSTRATES

被引：16

作者：

PANDE, KP ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 04期

关键词：

D O I：

10.1109/T-ED.1980.19914

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：631 / 634

页数：4

共 20 条

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[7] METAL-INSULATOR-SEMICONDUCTOR SOLAR-CELLS - THEORY AND EXPERIMENTAL RESULTS
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[8] OUTLINE AND COMPARISON OF POSSIBLE EFFECTS PRESENT IN A METAL-THIN-FILM-INSULATOR-SEMICONDUCTOR SOLAR-CELL
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[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) : 3597 - 3602
[9] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER
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[10] McQuat R. F., 1976, J APPL PHYS, V47, P2113

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