PHOTOVOLTAIC EFFECT OF 10.6-MU-M RADIATION ON HOT CARRIERS IN SILICON P+-N JUNCTIONS

被引：6

作者：

ENCINASSANZ, F ^{[1
]}

PEREZ, JMG ^{[1
]}

FERRARI, ED ^{[1
]}

机构：

[1] CSIC,INST ELECTR COMUNICAC,E-28006 MADRID,SPAIN

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.47.4517

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The highly nonlinear photovoltaic effect induced in silicon junctions by 10.6-mum laser pulses is theoretically studied through a hot-carrier-plasma model. Acoustic-phonon scattering is assumed to be the dominant energy relaxation mechanism during the hot-carrier thermalization. A simple relationship between the laser excitation intensity peak and the current response peak has been derived and is shown to fit the experimental results well.

引用

收藏

页码：4517 / 4521

页数：5

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