MAGNETIC-FIELD-INDUCED MOTT TRANSITION AND HOPPING CONDUCTION IN N-CDXHG1-XTE

被引:15
作者
ALEINIKOV, AB
BARANSKII, PI
ZHIDKOV, AV
机构
关键词
D O I
10.1016/0038-1098(83)90187-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:75 / 78
页数:4
相关论文
共 18 条
[1]  
ALEINIKOV AB, 1982, JETP LETT+, V35, P574
[2]  
ALEINIKOV AB, 1981, POLUPROVODNIKOVAJA T, V34, P54
[3]   QUANTUM LIMIT GALVANOMAGNETIC PHENOMENA IN N-INSB [J].
BECKMAN, O ;
HANAMURA, E ;
NEURINGER, LJ .
PHYSICAL REVIEW LETTERS, 1967, 18 (19) :773-+
[4]   HOPPING CONDUCTIVITY IN ORDERED AND DISORDERED-SYSTEMS .3. [J].
BOTTGER, H ;
BRYKSIN, VV .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 113 (01) :9-49
[5]   GALVANOMAGNETIC PROPERTIES OF N-TYPE HG0.8CD0.2TE [J].
DORNHAUS, R ;
NIMTZ, G ;
SCHLABITZ, W ;
ZAPLINSKI, P .
SOLID STATE COMMUNICATIONS, 1974, 15 (03) :495-498
[6]   TRANSVERSE MAGNETORESISTANCE OF HG1-XCDXTE IN EXTREME QUANTUM LIMIT [J].
DORNHAUS, R ;
NIMTZ, G .
SOLID STATE COMMUNICATIONS, 1977, 22 (01) :41-45
[7]   HIGH-FIELD MAGNETORESISTANCE OF HOPPING TRANSPORT IN DISORDERED IMPURITY SYSTEM OF TRANSMUTATION-DOPED GE [J].
KNOTEK, ML .
PHYSICAL REVIEW B, 1977, 16 (06) :2629-2641
[8]  
Mott N. F., 1968, Journal of Non-Crystalline Solids, V1, P1, DOI 10.1016/0022-3093(68)90002-1
[9]   METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS [J].
MOTT, NF ;
DAVIES, JH .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (06) :845-858
[10]   MAGNETO-TRANSPORT ANOMALY IN SEMICONDUCTORS AT LOW CARRIER-DENSITIES, A WIGNER CONDENSATION [J].
NIMTZ, G ;
SCHLICHT, B ;
TYSSEN, E ;
DORNHAUS, R ;
HAAS, LD .
SOLID STATE COMMUNICATIONS, 1979, 32 (08) :669-671