EXCIMER LASER PROJECTION LITHOGRAPHY

被引：22

作者：

JAIN, K ^{[1
]}

KERTH, RT ^{[1
]}

机构：

[1] IBM CORP,SAN JOSE RES LAB,SAN JOSE,CA 95193

来源：

APPLIED OPTICS | 1984年 / 23卷 / 05期

关键词：

D O I：

10.1364/AO.23.000648

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：648 / 650

页数：3

共 8 条

[1] DUBROEUCQ GM, 1982, OCT P INT C MICR ENG, P73
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JAIN, K
WILLSON, CG
LIN, BJ
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (03): : 53 - 55
[3] Lin B. J., 1980, Fine-line lithography, P105
[4] NEW CONCEPTS IN PROJECTION MASK ALIGNERS
OFFNER, A
[J]. OPTICAL ENGINEERING, 1975, 14 (02) : 130 - 132
[5] RECIPROCITY BEHAVIOR OF PHOTORESISTS IN EXCIMER LASER LITHOGRAPHY
RICE, S
JAIN, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 1 - 3
[6] RICE S, 1983, IBM RJ3868 RES REP
[7] SCOTT RM, 1974, Patent No. 3821763
[8] NOISE SUPPRESSION IN COHERENT IMAGING
UPATNIEKS, J
LEWIS, RW
[J]. APPLIED OPTICS, 1973, 12 (09) : 2161 - 2166