NATURE OF NONSUBSTITUTIONAL DOPANT STATES AND THE CARRIER-DENSITY STATISTICS IN HYDROGENATED AMORPHOUS-SILICON

被引：8

作者：

CHEN, I

JANSEN, F

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.29.3759

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3759 / 3761

页数：3

共 8 条

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[5] SEEGER K, 1973, SEMICONDUCTOR PHYSIC, P36
[6] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE
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[7] INVESTIGATION OF AMORPHOUS-SILICON BARRIER AND P-N-JUNCTION
SPEAR, WE
LECOMBER, PG
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (03): : 303 - 317
[8] DOPING AND THE FERMI ENERGY IN AMORPHOUS-SILICON
STREET, RA
[J]. PHYSICAL REVIEW LETTERS, 1982, 49 (16) : 1187 - 1190