ENHANCED FIELD-EMISSION FROM PLASMA-TEXTURIZED SI-SIO2 INTERFACES

被引：8

作者：

BUHLMANN, HJ

OLCER, M

ILEGEMS, M

机构：

[1] ETH, Microelectronics Inst,, Lausanne, Switz, ETH, Microelectronics Inst, Lausanne, Switz

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 04期

关键词：

DATA STORAGE; DIGITAL - Fixed - SEMICONDUCTING SILICON;

D O I：

10.1049/el:19860148

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a novel method to achieve enhanced electron injection into silicon dioxide by tunnel emission from texturized silicon surfaces. Field enhancement factors from approx. 4 to approx. 8 have been realized for 60 nm-thick oxides thermally grown on anisotropically plasma-etched Si surfaces. Implementation of these textured interface structures should allow significant improvements in the write/erase processes of EEPROM memory devices.

引用

页码：212 / 214

页数：3

共 6 条

[1] ENHANCED CONDUCTION AND MINIMIZED CHARGE TRAPPING IN ELECTRICALLY ALTERABLE READ-ONLY MEMORIES USING OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS
DIMARIA, DJ
DONG, DW
PESAVENTO, FL
LAM, C
BRORSON, SD
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 3000 - 3019
[2] DRORI J, 1981, FEB ISSCC, P148
[3] ELLIS RK, 1982, DEC IEDM, P749
[4] EXPERIMENTAL-OBSERVATIONS ON CONDUCTION THROUGH POLYSILICON OXIDE
HUFF, HR
HALVORSON, RD
CHIU, TL
GUTERMAN, D
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) : 2482 - 2488
[5] A 35-NS 64K EEPROM
JOLLY, RD
TESCH, R
CAMPBELL, KJ
TENNANT, DL
OLUND, JF
LEFFERTS, RB
CREMEN, BT
ANDREWS, PA
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (05) : 971 - 978
[6] HIGH FIELD ELECTRON EMISSION FROM IRREGULAR CATHODE SURFACES
LEWIS, TJ
[J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (12) : 1405 - 1410

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