DESIGN OF ASYMMETRIC QUARTER-WAVE-SHIFTED DFB SEMICONDUCTOR-LASERS

被引：3

作者：

FAVRE, F

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 21期

关键词：

D O I：

10.1049/el:19860762

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4

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页码：1113 / 1114

页数：2

相关论文

共 4 条

[1] SIMPLE ANALYSIS OF EXTERNAL OPTICAL FEEDBACK IN DFB SEMICONDUCTOR-LASERS [J].

FAVRE, F .

ELECTRONICS LETTERS, 1986, 22 (05) :275-276

[2] ANALYSIS OF THE SPECTRAL LINEWIDTH OF DISTRIBUTED FEEDBACK LASER-DIODES [J].

KOJIMA, K ;

KYUMA, K ;

NAKAYAMA, T .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (05) :1048-1055

[3] HIGH-EFFICIENCY OPERATION OF PHASE-ADJUSTED DFB LASER BY ASYMMETRIC STRUCTURE [J].

KOTAI, Y ;

SODA, H ;

WAKAO, K ;

ISHIKAWA, H ;

YAMAKOSHI, S ;

IMAI, H .

ELECTRONICS LETTERS, 1986, 22 (09) :462-463

[4] LAMBDA/4-SHIFTED INGAASP INP DFB LASERS BY SIMULTANEOUS HOLOGRAPHIC EXPOSURE OF POSITIVE AND NEGATIVE PHOTORESISTS [J].

UTAKA, K ;

AKIBA, S ;

SAKAI, K ;

MATSUSHIMA, Y .

ELECTRONICS LETTERS, 1984, 20 (24) :1008-1010