HIGH-TEMPERATURE POLYSILICON PRESSURE MICROSENSOR

被引:17
作者
OBIETA, I
CASTANO, E
GRACIA, FJ
机构
[1] Centro de Estudios e Investigaciones Técnicas de Guipúzcoa (CEIT), San Sebastián, E-20009
关键词
MICROSENSORS; POLYSILICON; PRESSURE SENSORS;
D O I
10.1016/0924-4247(94)00882-I
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A thin-film polysilicon on insulator microsensor for low-pressure/high-temperature measurements has been developed. The microsensor is constituted by a micromachined silicon diaphragm, a thin silicon dioxide layer, an optimized sputtered boron-doped polysilicon layer, photolithographically patterned on a Wheatstone bridge configuration, and an aluminium interconnection layer. The complete fabrication process is described. The sensors manufactured in this way exhibit low temperature coefficients of resistance and sensitivity over the range 25-250 degrees C and a good long-term stability. The sensitivities measured are up to 3 mV V-1 bar(-1). The deviation from linearity and hysteresis observed in the output characteristics is measured in the pressure range 0-10 bar.
引用
收藏
页码:161 / 165
页数:5
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