ION-BEAM ETCHING OF INP .1. AR ION-BEAM ETCHING AND FABRICATION OF GRATING FOR INTEGRATED-OPTICS

被引：25

作者：

YUBA, Y

GAMO, K

TOBA, H

XI, GH

NAMBA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 07期

关键词：

D O I：

10.1143/JJAP.22.1206

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1206 / 1210

页数：5

共 15 条

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[8]

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[10] 1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP-INP LASERS [J].

ITAYA, Y ;

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