TRANSIENT KINETICS OF NUCLEATION AND CRYSTALLIZATION .2. CRYSTALLIZATION

被引：25

作者：

SHI, G

SEINFELD, JH

机构：

[1] Department of Chemical Engineering, California Institute of Technology, Pasadena, California

来源：

JOURNAL OF MATERIALS RESEARCH | 1991年 / 6卷 / 10期

关键词：

D O I：

10.1557/JMR.1991.2097

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Analytical expressions for the time-dependent crystallized volume fraction are derived from new results for the transient rate of nucleation reported in Part I. Conventional formulations that have been used in interpreting crystallization experimental data and for assessing the stability of amorphous phases are shown to be large time limits of the newly derived expressions. An approach for assessing the stability of an amorphous phase is proposed.

引用

页码：2097 / 2102

页数：6

共 18 条

[1] Granulation, Phase Change, and Microstructure - Kinetics of Phase Change. III
Avrami, M
[J]. JOURNAL OF CHEMICAL PHYSICS, 1941, 9 (02) : 177 - 184
[2] Christian J., 1975, THEORY PHASE TRANSFO
[3] LATERAL SOLID-PHASE EPITAXY OF AMORPHOUS SI FILMS BY SELECTIVE SURFACE DOPING METHOD OF P-ATOMS
DAN, T
ISHIWARA, H
FURUKAWA, S
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (26) : 2626 - 2628
[4] Gravesreijn D.J., 1988, APPL OPTICS, V27, P726
[5] INDUCED CRYSTALLIZATION OF GLASS-FORMING SYSTEMS - A CASE OF TRANSIENT HETEROGENEOUS NUCLEATION .1.
GUTZOW, I
[J]. CONTEMPORARY PHYSICS, 1980, 21 (02) : 121 - 137
[6] GUTZOW I, 1985, J NONCRYST SOLIDS, V73, P473
[7] INVERSON RB, 1987, J APPL PHYS, V62, P1675
[8] INVERSON RB, 1988, APPL PHYS LETT, V52, P645
[9] LATERAL SOLID-PHASE EPITAXY OF AMORPHOUS SI FILMS ON SI SUBSTRATES WITH SIO2 PATTERNS
ISHIWARA, H
YAMAMOTO, H
FURUKAWA, S
TAMURA, M
TOKUYAMA, T
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 1028 - 1030
[10] ISHIWARA H, 1986, APPL PHYS LETT, V48, P733

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