LATERAL SOLID-PHASE EPITAXY OF AMORPHOUS SI FILMS BY SELECTIVE SURFACE DOPING METHOD OF P-ATOMS

被引：7

作者：

DAN, T

ISHIWARA, H

FURUKAWA, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 26期

关键词：

D O I：

10.1063/1.100179

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2626 / 2628

页数：3

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