LATERAL SOLID-PHASE EPITAXY IN SELECTIVELY P-DOPED AMORPHOUS SI FILMS

被引：8

作者：

ISHIWARA, H

TANAKA, M

FURUKAWA, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 20期

关键词：

D O I：

10.1063/1.97325

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1363 / 1365

页数：3

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[1] LATERAL SOLID-PHASE EPITAXY OF AMORPHOUS SI FILMS ONTO NONPLANAR SIO2 PATTERNS ON SI SUBSTRATES
ISHIWARA, H
TAMBA, A
FURUKAWA, S
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (12) : 773 - 775
[2] LATERAL SOLID-PHASE EPITAXY OF AMORPHOUS SI FILMS ON SI SUBSTRATES WITH SIO2 PATTERNS
ISHIWARA, H
YAMAMOTO, H
FURUKAWA, S
TAMURA, M
TOKUYAMA, T
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 1028 - 1030
[3] SOLID-PHASE LATERAL EPITAXY OF CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON BY FURNACE ANNEALING
KUNII, Y
TABE, M
KAJIYAMA, K
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2847 - 2849
[4] AMORPHOUS-SI CRYSTALLINE-SI FACET FORMATION DURING SI SOLID-PHASE EPITAXY NEAR SI/SIO2 BOUNDARY
KUNII, Y
TABE, M
KAJIYAMA, K
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 279 - 285
[5] ON THE MECHANISMS OF LATERAL SOLID-PHASE EPITAXIAL-GROWTH OF AMORPHOUS SI FILMS EVAPORATED ON SIO2 PATTERNS
YAMAMOTO, H
ISHIWARA, H
FURUKAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (04): : 411 - 415
[6] ENHANCEMENT OF LATERAL SOLID-PHASE EPITAXIAL-GROWTH IN EVAPORATED AMORPHOUS SI FILMS BY PHOSPHORUS IMPLANTATION
YAMAMOTO, H
ISHIWARA, H
FURUKAWA, S
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (03) : 268 - 270
[7] ORIENTATION DEPENDENCE OF LATERAL SOLID-PHASE-EPITAXIAL GROWTH IN AMORPHOUS SI FILMS
YAMAMOTO, H
ISHIWARA, H
FURUKAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (05): : 667 - 672