UNIFIED MODEL OF IDEAL METAL-SEMICONDUCTOR CONTACTS AND SEMICONDUCTOR HETEROJUNCTIONS

被引:4
作者
MAILHIOT, C
DUKE, CB
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期
关键词
D O I
10.1116/1.573798
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:869 / 873
页数:5
相关论文
共 43 条
[1]   EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].
ANDERSON, RL .
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&
[2]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[3]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[4]  
COHEN ML, 1980, ADV ELECTRON EL PHYS, V51, P1
[5]   GASE-GE AND GASE-SI - 2 POSSIBLE EXAMPLES OF SCHOTTKY-LIKE BEHAVIOR OF HETEROJUNCTION INTERFACES [J].
DANIELS, RR ;
MARGARITONDO, G ;
QUARESIMA, C ;
PERFETTI, P ;
LEVY, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :979-980
[6]   A MICROSCOPIC MODEL OF METAL-SEMICONDUCTOR CONTACTS [J].
DUKE, CB ;
MAILHIOT, C .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1170-1177
[7]  
DUKE CB, 1983, ADV CERAM, V6, P1
[8]  
DUKE CB, 1968, J VAC SCI TECHNOL, V6, P152
[9]   PREDICTION OF SEMICONDUCTOR HETEROJUNCTION DISCONTINUITIES FROM BULK BAND STRUCTURES [J].
FRENSLEY, WR ;
KROEMER, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :810-815
[10]   THEORY OF ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION [J].
FRENSLEY, WR ;
KROEMER, H .
PHYSICAL REVIEW B, 1977, 16 (06) :2642-2652