A DLTS STUDY OF THE EFFECTS OF BORON COUNTERDOPING ON THE GAP STATES IN NORMAL-TYPE HYDROGENATED AMORPHOUS-SILICON

被引：7

作者：

CULLEN, P

HARBISON, JP

LANG, DV

ADLER, D

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[2] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

[3] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

SOLID STATE COMMUNICATIONS | 1984年 / 50卷 / 11期

关键词：

D O I：

10.1016/0038-1098(84)90272-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：991 / 994

页数：4

共 12 条

[1] CHARACTERIZATION OF HIGH GAP STATE DENSITIES IN HEAVILY HYDROGENATED A-SI
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[2] CARLOS WE, 1982, B AM PHYS SOC, V27, P208
[3] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY
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[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112
[4] CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES
COHEN, JD
LANG, DV
[J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5321 - 5350
[5] HARBISON JP, UNPUB J APPL PHYS
[6] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
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AMER, NM
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562
[7] FIELD-EFFECT AND THERMOELECTRIC-POWER ON BORON DOPED AMORPHOUS-SILICON
JAN, ZS
BUBE, RH
KNIGHTS, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3278 - 3281
[8] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY
LANG, DV
COHEN, JD
HARBISON, JP
[J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5285 - 5320
[9] OBSERVATION OF PHOTOINDUCED CHANGES IN THE BULK-DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON
LANG, DV
COHEN, JD
HARBISON, JP
SERGENT, AM
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 474 - 476
[10] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON
SPEAR, WE
LECOMBER, PG
[J]. SOLID STATE COMMUNICATIONS, 1975, 17 (09) : 1193 - 1196

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