EFFICIENCY OF GASS1-XPX ELECTROLUMINESCENT DIODES

被引：34

作者：

MARUSKA, HP

PANKOVE, JI

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 09期

关键词：

D O I：

10.1016/0038-1101(67)90006-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：917 / &

共 31 条

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[8] EFFECT OF HIGHER ABSORPTION IN NON-LASING GAAS DIODES AT 300 DEGREES K [J].

GONDA, T ;

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NYUL, P ;

JUNKER, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1966, QE 2 (04) :74-+

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[10]

HILL DE, 1966, B AM PHYS SOC, V11, P205

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