LASER DAMAGE IN SILICON PHOTODIODES

被引：40

作者：

KRUER, M ^{[1
]}

ALLEN, R ^{[1
]}

ESTEROWITZ, L ^{[1
]}

BARTOLI, F ^{[1
]}

机构：

[1] NAVAL RES LAB,WASHINGTON,DC 20375

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1976年 / 8卷 / 05期

关键词：

D O I：

10.1007/BF00624835

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：453 / 458

页数：6

共 16 条

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[2] LASER DAMAGE ON SEMICONDUCTOR SURFACES [J].

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VITALI, G .

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[3]

CARSLAW HS, 1959, CONDUCTION HEAT SOLI, pCH2

[4]

DENNINGHAM RL, COMMUNICATION

[5]

DENNINGHAM RL, TO BE PUBLISHED

[6]

GRINBERG AA, 1967, FIZ TVERD TELA+, V9, P1085

[7]

GUILIANI JF, 1974, J APPL PHYS, V45, P4993

[8] INFRARED ABSORPTION OF SILICON NEAR THE LATTICE EDGE [J].

MACFARLANE, GG ;

ROBERTS, V .

PHYSICAL REVIEW, 1955, 98 (06) :1865-1866

[9] OBSERVATION OF IMPURITY MIGRATION IN LASER-DAMAGED JUNCTION DEVICES [J].

MARQUARDT, CL ;

GIULIANI, JF ;

FRASER, FW .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 23 (02) :135-139

[10] NORMAL LASER DAMAGE OF SILICON SOLAR CELLS WITHOUT PHASE-CHANGE [J].

MATSUOKA, Y ;

USAMI, A .

APPLIED PHYSICS LETTERS, 1974, 25 (10) :574-576

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