NORMAL LASER DAMAGE OF SILICON SOLAR CELLS WITHOUT PHASE-CHANGE

被引：20

作者：

MATSUOKA, Y

USAMI, A

机构：

[1] MEIJO UNIV,DEPT PHYS,SHOWA,NAGOYA,JAPAN

[2] NAGOYA INST TECHNOL,DEPT ELECTR,SHOWA,NAGOYA,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 10期

关键词：

D O I：

10.1063/1.1655316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：574 / 576

页数：3

共 9 条

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[2] LASER DAMAGE ON SEMICONDUCTOR SURFACES [J].

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SETTE, D ;

VITALI, G .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (10) :4088-+

[3]

Bertolottie M., 1969, Radiation Effects, V1, P161, DOI 10.1080/00337576908235490

[4] SEMICONDUCTOR SURFACE DAMAGE PRODUCED BY RUBY LASERS [J].

BIRNBAUM, M .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (11) :3688-&

[5] SPECTRAL RESPONSE OF SOLAR CELLS [J].

DALE, B ;

SMITH, FP .

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[6]

GRINBERG AA, 1967, FIZ TVERD TELA+, V9, P1085

[7]

MATSUOKA Y, TO BE PUBLISHED

[8] DEFECTS IN QUENCHED SILICON [J].

SWANSON, ML .

PHYSICA STATUS SOLIDI, 1969, 33 (02) :721-&

[9] EFFECTS OF IMPURITIES ON RADIATION DAMAGE AND ANNEALING BEHAVIOR OF SI SOLAR CELLS [J].

USAMI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) :1063-+

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