A PHENOMENOLOGICAL MODEL FOR SURFACE DEPOSITION KINETICS DURING PLASMA AND SPUTTER DEPOSITION OF AMORPHOUS HYDROGENATED SILICON

被引：33

作者：

KUSHNER, MJ

机构：

来源：

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D O I：

10.1063/1.339030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4763 / 4772

页数：10

共 27 条

[1] BEIGELSON DK, 1979, PHYS REV B, V20, P4839
[2] A MATHEMATICAL-MODEL OF THE COUPLED FLUID-MECHANICS AND CHEMICAL-KINETICS IN A CHEMICAL VAPOR-DEPOSITION REACTOR
COLTRIN, ME
KEE, RJ
MILLER, JA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (02) : 425 - 434
[3] Gallagher A., 1986, Materials Issues in Amorphous-Semiconductor Technology Symposium, P3
[4] MONTE-CARLO SIMULATIONS OF AMORPHOUS HYDROGENATED SILICON THIN-FILM GROWTH
GLEASON, KK
WANG, KS
CHEN, MK
REIMER, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) : 2866 - 2873
[5] HIROSE M, 1984, SEMICONDUCT SEMIMET, V21, P109
[6] HIROSE M, 1984, SEMICONDUCT SEMIMET, V21, P9
[7] A THEORETICAL-STUDY OF THE HEATS OF FORMATION OF SI2HN (N = 0-6) COMPOUNDS AND TRISILANE
HO, P
COLTRIN, ME
BINKLEY, JS
MELIUS, CF
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1986, 90 (15) : 3399 - 3406
[8] CONTROL OF DIHYDRIDE BOND DENSITY IN REACTIVE SPUTTERED AMORPHOUS-SILICON
JEFFREY, FR
SHANKS, HR
DANIELSON, GC
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 7034 - 7038
[9] KAMPAS FJ, 1984, SEMICONDUCT SEMIMET, V21, P153
[10] ORIGIN OF HYDROGEN IN AMORPHOUS-SILICON PRODUCED BY GLOW-DISCHARGE IN SI2H6+D2 AND SI2D6+H2
KUBOI, O
HASHIMOTO, M
YATSURUGI, Y
NAGAI, H
ARATANI, M
YANOKURA, M
HAYASHI, S
KOHNO, I
NOZAKI, T
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (05) : 543 - 545