A PHENOMENOLOGICAL MODEL FOR SURFACE DEPOSITION KINETICS DURING PLASMA AND SPUTTER DEPOSITION OF AMORPHOUS HYDROGENATED SILICON

被引：33

作者：

KUSHNER, MJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 12期

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D O I：

10.1063/1.339030

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：4763 / 4772

页数：10

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