POINT-DEFECTS IN NEUTRON-TRANSMUTATION-DOPED CZOCHRALSKI-GROWN SI STUDIED BY POSITRON-ANNIHILATION

被引：15

作者：

MENG, XT ^{[1
]}

LIOLIOS, AK ^{[1
]}

CHARDALAS, M ^{[1
]}

DEDOUSSIS, S ^{[1
]}

ELEFTHERIADIS, CA ^{[1
]}

CHARALAMBOUS, S ^{[1
]}

机构：

[1] ARISTOTELIAN UNIV SALONIKA,DEPT PHYS,GR-54006 SALONIKA,GREECE

来源：

PHYSICS LETTERS A | 1991年 / 157卷 / 01期

关键词：

D O I：

10.1016/0375-9601(91)90411-Z

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Positron lifetime and Doppler broadening of the annihilation line measurements in neutron-transmutation-doped Czochralski-grown silicon have been performed. Three annealing stages are observed due to the different annealing behaviour of V2, V4 and V-P complexes.

引用

页码：73 / 77

页数：5

共 23 条

[1]

ANTONOVA IV, 1989, SOV PHYS SEMICOND+, V23, P671

[2] POSITRON LIFETIME IN AMORPHOUS TRANSITION-METAL METALLOID ALLOYS [J].

CHARDALAS, M ;

DEDOUSSIS, S ;

LIOLIOS, AK ;

CHARALAMBOUS, S ;

TROEV, T .

PHYSICA B-CONDENSED MATTER, 1990, 167 (01) :71-74

[3] POSITRON-ANNIHILATION IN NEUTRON-IRRADIATED P-TYPE SILICON [J].

CHENG, LJ ;

YEH, CK ;

MA, SI ;

SU, CS .

PHYSICAL REVIEW B, 1973, 8 (06) :2880-2886

[4] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J].

CHENG, LJ ;

CORELLI, JC ;

CORBETT, JW ;

WATKINS, GD .

PHYSICAL REVIEW, 1966, 152 (02) :761-+

[5]

CLELAND JW, 1981, NEUTRON TRANSMUTATIO, P55

[6] INFLUENCE OF DEFECTS AND TEMPERATURE ON ANNIHILATION OF POSITRONS IN NEUTRON-IRRADIATED SILICON [J].

DANNEFAER, S ;

DEAN, GW ;

KERR, DP ;

HOGG, BG .

PHYSICAL REVIEW B, 1976, 14 (07) :2709-2714

[7] DEFECTS AND OXYGEN IN SILICON STUDIED BY POSITRONS [J].

DANNEFAER, S .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 102 (02) :481-491

[8]

DANNEFAER S, 1988, 8 P ICPA GENT, P86

[9] OPTICAL STUDIES OF RADIATION-DAMAGE IN NEUTRON TRANSMUTATION DOPED SILICON [J].

FUKUOKA, N ;

CLELAND, JW .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 51 (3-4) :215-222

[10] ROLE OF DEFECT CHARGE STATE IN STABILITY OF POINT-DEFECTS IN SILICON [J].

KIMERLING, LC ;

DEANGELIS, HM ;

DIEBOLD, JW .

SOLID STATE COMMUNICATIONS, 1975, 16 (01) :171-174

← 1 2 3 →