EFFECTS OF RADIATION ON GOLD DIFFUSION IN SILICON

被引：9

作者：

CHENG, LJ

SULI, M

KOWALL, JP

WALLACE, PW

CORBETT, JW

机构：

[1] SUNY ALBANY,INST STUDY DEFECTS SOLIDS,ALBANY,NY 12222

[2] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 38卷 / 01期

关键词：

D O I：

10.1002/pssa.2210380136

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：321 / 330

页数：10

相关论文

共 37 条

[1] BADOLOV AZ, 1972, SOVIET PHYS SEMICOND, V6, P685
[2] IONIZATION-ENHANCED DIFFUSION - ION-IMPLANTATION IN SEMICONDUCTORS
BOURGOIN, J
PEAK, D
CORBETT, JW
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3022 - 3027
[3] NEW MECHANISM FOR INTERSTITIAL MIGRATION
BOURGOIN, JC
CORBETT, JW
[J]. PHYSICS LETTERS A, 1972, A 38 (02) : 135 - &
[4] BOURGOIN JC, 1973, J CHEM PHYS, V59, P4042, DOI [10.1063/1.1680596, 10.1063/1.433143]
[5] SOLUBILITY OF GOLD IN P-TYPE SILICON
BROWN, M
JONES, CL
WILLOUGHBY, AFW
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (09) : 763 - 770
[6] GETTERING RATES OF VARIOUS FAST-DIFFUSING METAL IMPURITIES AT ION-DAMAGED LAYERS ON SILICON
BUCK, TM
HSIEH, CM
POATE, JM
PICKAR, KA
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (10) : 485 - &
[7] ENHANCED GOLD SOLUBILITY EFFECT IN HEAVILY N-TYPE SILICON
CAGNINA, SF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) : 498 - &
[8] RESIDUAL DISORDER IN SI FROM OXYGEN RECOILS IN ANNEALED THROUGH OXIDE ARSENIC IMPLANTS
CHU, WK
MULLER, H
MAYER, JW
SIGMON, TW
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (05) : 297 - 299
[9] CORBIN A, 1975, ENDOCR RES COMMUN, V2, P1
[10] GOLD-INDUCED CLIMB OF DISLOCATIONS IN SILICON
DASH, WC
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) : 2275 - 2283

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