共 31 条
[2]
ON THE NATURE OF BALLISTIC TRANSPORT IN SHORT-CHANNEL SEMICONDUCTOR-DEVICES
[J].
ELECTRON DEVICE LETTERS,
1980, 1 (10)
:209-210
[3]
RECENT RESULTS WITH EPITAXIAL GAAS GUNN EFFECT OSCILLATORS
[J].
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS,
1966, 54 (10)
:1497-+
[4]
DYNAMICAL RESPONSE OF ELECTRONS IN GAAS AT 300 K
[J].
PHYSICA STATUS SOLIDI B-BASIC RESEARCH,
1977, 81 (01)
:147-152
[9]
HIGH-FREQUENCY EFFECTS OF BALLISTIC ELECTRON-TRANSPORT IN SEMICONDUCTORS
[J].
ELECTRON DEVICE LETTERS,
1980, 1 (07)
:137-139