CRYSTAL-GROWTH OF THICK WAFERS OF BORON PHOSPHIDE

被引：15

作者：

KUMASHIRO, Y

OKADA, Y

GONDA, S

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 70卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(84)90309-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：507 / 514

页数：8

共 15 条

[1] SYNTHESIS OF SINGLE-CRYSTAL BORON PHOSPHIDE [J].

ANANTHANARAYANAN, KP ;

MOHANTY, C ;

GIELISSE, PJ .

JOURNAL OF CRYSTAL GROWTH, 1973, 20 (01) :63-67

[2]

BROOKES CA, 1983, PHILOS MAG A, V47, pL9, DOI 10.1080/01418618308245250

[3] CRYSTALS AND EPITAXIAL LAYERS OF BORON PHOSPHIDE [J].

CHU, TL ;

JACKSON, JM ;

HYSLOP, AE ;

CHU, SC .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) :420-&

[4] GROWTH OF BORON MONOPHOSPHIDE CRYSTALS BY CHEMICAL TRANSPORT [J].

CHU, TL ;

JACKSON, JM ;

SMELTZER, RK .

JOURNAL OF CRYSTAL GROWTH, 1972, 15 (04) :254-&

[5]

CHU TL, 1975, J ELECTROCHEM SOC, V120, P802

[6] PREPARATION OF BP SINGLE-CRYSTALS FROM B-NI-P SOLUTION [J].

IWAMI, M ;

KAWABE, K ;

FUJITA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (12) :1746-&

[7] SYNTHESES OF BP UNDER HIGH-PRESSURES [J].

KOBAYASHI, T ;

SUSA, K ;

TANIGUCHI, S .

MATERIALS RESEARCH BULLETIN, 1974, 9 (05) :625-631

[8] THERMAL-EXPANSION COEFFICIENT OF BORON MONOPHOSPHIDE [J].

MIZUTANI, T ;

OHSAWA, J ;

NISHINAGA, T ;

UCHIYAMA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (07) :1305-1308

[9] METALLIC IMPURITY-ACTIVATED CRYSTAL-GROWTH OF BORON PHOSPHIDE BY CHEMICAL VAPOR-DEPOSITION AND ITS PHYSICAL-PROPERTIES [J].

MOTOJIMA, S ;

MIURA, Y ;

SUGIYAMA, K ;

TAKAHASHI, Y .

BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN, 1975, 48 (11) :3161-3167

[10] EPITAXIAL-GROWTH OF BP COMPOUNDS ON SI SUBSTRATES USING B2H6-PH3-H2 SYSTEM [J].

SHOHNO, K ;

TAKIGAWA, M ;

NAKADA, T .

JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) :193-196

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