LOW-RESISTANCE OHMIC CONDUCTION ACROSS COMPOUND SEMICONDUCTOR WAFER-BENDED INTERFACES

被引：80

作者：

KISH, FA ^{[1
]}

VANDERWATER, DA ^{[1
]}

PEANASKY, MJ ^{[1
]}

LUDOWISE, MJ ^{[1
]}

HUMMEL, SG ^{[1
]}

ROSNER, SJ ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94303

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 14期

关键词：

D O I：

10.1063/1.115078

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented demonstrating low-resistance Ohmic conduction across interfaces formed by high-temperature (750-1000 degrees C) compound semiconductor wafer bonding. Unipolar junctions formed by wafer bonding surfaces consisting of In0.5Ga0.5P/In0.5Ga0.5P, GaP/GaP, GaP/In0.5Ga0.5P, and In0.5Ga0.5P/GaAs are shown to exhibit low-resistance Ohmic conduction for both p- and n-isotype junctions. The achievement: of these properties is demonstrated to be critically dependent upon the crystallo,graphic alignment of the bonded wafer surfaces, irrespective of the lattice mismatch between the surfaces. Specifically, we show that the surface orientation of the bonded surfaces must be nominally matched while simultaneously maintaining rotational alignment of the wafers. (C) 1995 American Institute of Physics.

引用

页码：2060 / 2062

页数：3