REDUCTION OF GATE RESISTANCE IN 10TH-MICRON GATE MODFETS FOR MICROWAVE APPLICATIONS

被引：10

作者：

WANG, GW

CHEN, YK

EASTMAN, LF

WHITEHEAD, B

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

[2] NATL NANOFABRICAT FAC,ITHACA,NY 14853

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 08期

关键词：

D O I：

10.1016/0038-1101(88)90422-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1247 / 1250

页数：4

共 7 条

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LESTER, LF ;

LEE, BR ;

JABRA, A ;

GIFFORD, GG .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) :489-491

[2] ELECTRON-BEAM FABRICATION OF GAAS LOW-NOISE MESFETS USING A NEW TRILAYER RESIST TECHNIQUE [J].

CHAO, PC ;

SMITH, PM ;

PALMATEER, SC ;

HWANG, JCM .

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[3]

CHEN YK, 1987, IEDM WASHINGTON

[4]

CHUE PW, 1982, IEEE ELECTRON DEV LE, V3, P401

[5]

Mishra U. K., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P829

[6] VERY SHORT GATE-LENGTH GAAS-MESFETS [J].

PATRICK, W ;

MACKIE, WS ;

BEAUMONT, SP ;

WILKINSON, CDW ;

OXLEY, CH .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) :471-472

[7]

Wolf P., 1970, IBM J RES DEV MAR, P125

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