OVERLAYER METALLICITY AND FERMI-LEVEL PINNING AT THE CA-GAAS(110) INTERFACE

被引：6

作者：

MAO, D

YOUNG, K

STILES, K

KAHN, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 09期

关键词：

D O I：

10.1063/1.341198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4777 / 4780

页数：4

共 16 条

[1] KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES [J].

CAO, R ;

MIYANO, K ;

KENDELEWICZ, T ;

CHIN, KK ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :998-1002

[2] SYSTEMATICS OF ELECTRONIC-STRUCTURE AND LOCAL BONDING FOR METAL/GAAS(110) INTERFACES [J].

JOYCE, JJ ;

GRIONI, M ;

DELGIUDICE, M ;

RUCKMAN, MW ;

BOSCHERINI, F ;

WEAVER, JH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :2019-2023

[3]

KARAPETYANTS MK, 1970, THERMODYNAMIC CONSTA, P58

[4] IONICITY AND THEORY OF SCHOTTKY BARRIERS [J].

LOUIE, SG ;

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1977, 15 (04) :2154-2162

[5] SCREENING AND DELOCALIZATION EFFECTS IN SCHOTTKY-BARRIER FORMATION [J].

LUDEKE, R ;

JEZEQUEL, G ;

TALEBIBRAHIMI, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1277-1284

[6]

Mao D., UNPUB

[7] FORMATION OF SCHOTTKY-BARRIER AT THE TM/GAAS(110) INTERFACE [J].

PRIETSCH, M ;

DOMKE, M ;

LAUBSCHAT, C ;

KAINDL, G .

PHYSICAL REVIEW LETTERS, 1988, 60 (05) :436-439

[8] FORMATION OF METAL-SEMICONDUCTOR INTERFACES - FROM THE SUBMONOLAYER REGIME TO THE REAL SCHOTTKY-BARRIER [J].

SCHAFFLER, F ;

ABSTREITER, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1184-1189

[9]

SPICER WE, 1979, J VAC SCI TECHNOL, V16, P1427

[10] CORRELATION BETWEEN EF PINNING AND DEVELOPMENT OF METALLIC CHARACTER IN AG OVERLAYERS ON GAAS(110) [J].

STILES, K ;

KAHN, A .

PHYSICAL REVIEW LETTERS, 1988, 60 (05) :440-443

← 1 2 →