IN-SITU MONITORING OF GAAS ETCHED WITH A CL-2/AR DISCHARGE IN AN ELECTRON-CYCLOTRON-RESONANCE SOURCE

被引：7

作者：

KAHAIAN, DJ

THOMAS, S

PANG, SW

机构：

[1] Univ of Michigan, Ann Arbor

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 02期

关键词：

D O I：

10.1116/1.588360

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs etching with a Cl2/Ar plasma generated by an electron cyclotron resonance source was studied in situ using Quadruple mass spectrometry (QMS). Partial pressure form reactive species and volatile each products down to 10-10 Torr can be detected. AsCl2+ (x=1-3) products were detected from 6X6 mm2 GaAs samples. The 145AsCl2+ signal is generally the strongest. For an increase of microwave power from 50 to 400 W, the GaAs etch rate increased from 151 to 263 nm/min and the AsCl2+ partial pressure increased from 0.6 × 10-8 Torr.

引用

收藏

页码：253 / 257

页数：5

相关论文

共 14 条

[1] ETCHING OF GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE IN RF DISCHARGES THROUGH MIXTURES OF TRICHLOROFLUOROMETHANE AND OXYGEN [J].

BURTON, RH ;

HOLLIEN, CL ;

MARCHUT, L ;

ABYS, SM ;

SMOLINSKY, G ;

GOTTSCHO, RA .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6663-6671

[2] NEW TECHNIQUE FOR DRY ETCH DAMAGE ASSESSMENT OF SEMICONDUCTORS [J].

FOAD, MA ;

THOMS, S ;

WILKINSON, CDW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (01) :20-25

[3] REACTIVE ION ETCHING OF INP USING CH4/H2 MIXTURES - MECHANISMS OF ETCHING AND ANISOTROPY [J].

HAYES, TR ;

DREISBACH, MA ;

THOMAS, PM ;

DAUTREMONTSMITH, WC ;

HEIMBROOK, LA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (05) :1130-1140

[4]

HOPWOOD J, 1991, J VAC SCI TECHNOL B, V9, P3521

[5] COMPARISON BETWEEN ETCHING IN CL2 AND BCL3 FOR COMPOUND SEMICONDUCTORS USING A MULTIPOLAR ELECTRON-CYCLOTRON RESONANCE SOURCE [J].

PANG, SW ;

KO, KK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06) :2703-2707

[6] ETCHING OF PHOTORESIST USING OXYGEN PLASMA GENERATED BY A MULTIPOLAR ELECTRON-CYCLOTRON RESONANCE SOURCE [J].

PANG, SW ;

SUNG, KT ;

KO, KK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (03) :1118-1123

[7]

PEARTON SJ, 1987, SEMICOND SCI TECH, V6, P948

[8] ETCHING OF SIO2 IN SF6 PLASMAS - THE ROLE OF IONS AND ELECTRONS IN ETCHING MECHANISMS [J].

PETIT, B ;

DURANDET, A ;

PELLETIER, J .

VACUUM, 1986, 36 (11-12) :799-802

[9] AN ANALYTICAL STUDY OF ETCH AND ETCH-STOP REACTIONS FOR GAAS ON ALGAAS IN CCL2F2 PLASMA [J].

SEAWARD, KL ;

MOLL, NJ ;

COULMAN, DJ ;

STICKLE, WF .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) :2358-2364

[10] AN INVESTIGATION OF THE REACTIVE ION ETCHING OF POLYSILICON IN PURE CL2 PLASMAS BY INSITU ELLIPSOMETRY AND QUADRUPOLE MASS-SPECTROMETRY [J].

THOMAS, DJ ;

SOUTHWORTH, P ;

FLOWERS, MC ;

GREEF, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (05) :1044-1051