ETCHING OF SIO2 IN SF6 PLASMAS - THE ROLE OF IONS AND ELECTRONS IN ETCHING MECHANISMS

被引：5

作者：

PETIT, B ^{[1
]}

DURANDET, A ^{[1
]}

PELLETIER, J ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE

来源：

VACUUM | 1986年 / 36卷 / 11-12期

关键词：

D O I：

10.1016/0042-207X(86)90114-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：799 / 802

页数：4

共 8 条

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[4] MICROWAVE MULTIPOLAR PLASMAS - A POSSIBLE SOLUTION FOR ETCHING IN MICROELECTRONICS [J].

PELLETIER, J ;

ARNAL, Y ;

PETIT, B ;

POMOT, C ;

PICHOT, M .

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[5]

PETIT B, 1986, CR ACAD SCI II, V302, P121

[6]

PETIT B, 1985, P ISPC 7, V3, P1013

[7]

PETIT B, 1985, VIDE COUCHES MINCE S, V229, P273

[8]

POMATHIOD L, 1985, PHYS LETT A, V106, P301

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