MICROWAVE MULTIPOLAR PLASMAS - A POSSIBLE SOLUTION FOR ETCHING IN MICROELECTRONICS

被引：36

作者：

PELLETIER, J

ARNAL, Y

PETIT, B

POMOT, C

PICHOT, M

机构：

来源：

关键词：

D O I：

10.1088/0022-3727/19/5/012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：795 / 809

页数：15

共 36 条

[1] PLASMA-ETCHING IN MAGNETIC MULTIPOLE MICROWAVE-DISCHARGE
ARNAL, Y
PELLETIER, J
POMOT, C
PETIT, B
DURANDET, A
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (02) : 132 - 134
[2] BARDET R, 1964, CR HEBD ACAD SCI, V258, P4454
[3] BOSCHI A, 1963, NUOVO CIMENTO, V29, P485
[4] PLASMA SHEATH FORMATION BY RADIO-FREQUENCY FIELDS
BUTLER, HS
KINO, GS
[J]. PHYSICS OF FLUIDS, 1963, 6 (09) : 1346 - 1355
[5] CHABERT P, 1983, VIDE COUCHES MINCE S, V218, P25
[6] ANISOTROPIC ETCHING OF SIO2 IN LOW-FREQUENCY CF4/O2 AND NF3/AR PLASMAS
DONNELLY, VM
FLAMM, DL
DAUTREMONTSMITH, WC
WERDER, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (01) : 242 - 252
[7] SILANE DISSOCIATION MECHANISMS AND THIN-FILM FORMATION IN A LOW-PRESSURE MULTIPOLE DC DISCHARGE
DREVILLON, B
HUC, J
LLORET, A
PERRIN, J
DEROSNY, G
SCHMITT, JPM
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 646 - 648
[8] DREVILLON B, 1982, VIDE COUCHES MINCE S, V212, P37
[9] NEW HIGH INTENSITY ION SOURCE WITH VERY LOW EXTRACTION VOLTAGE
GELLER, R
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (10) : 401 - &
[10] ION-BEAM DAMAGE EFFECTS DURING THE LOW-ENERGY CLEANING OF GAAS
GHANDHI, SK
KWAN, P
BHAT, KN
BORREGO, JM
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (02): : 48 - 50