CURRENT TRANSPORT IN STRAINED N-SI1-XGEX/P-SI HETEROJUNCTION DIODES

被引：13

作者：

WILLANDER, M

SHEN, GD

XU, DX

NI, WX

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 10期

关键词：

D O I：

10.1063/1.340451

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5036 / 5039

页数：4

共 12 条

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[8] AVALANCHE GAIN IN GEXSI1-X/SI INFRARED WAVE-GUIDE DETECTORS [J].

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