CARRIER-DEPENDENT HYDROGEN MIGRATION IN HYDROGENATED AMORPHOUS-SILICON

被引：15

作者：

SANTOS, PV ^{[1
]}

JOHNSON, NM ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 07期

关键词：

D O I：

10.1063/1.108849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experiments demonstrate that hydrogen migration in hydrogenated amorphous silicon is controlled by the concentration of electronic carriers and, therefore, is strongly suppressed when the carriers are removed by an electric field. Furthermore, the few hydrogen atoms migrating in a region depleted of carriers have an increased mean free path for diffusion due to a reduction in the concentration of trapping centers, which are probably silicon dangling bonds.

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页码：720 / 722

页数：3

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